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LM74670QDGKRQ1中文资料
LM74670QDGKRQ1数据手册规格书PDF详情
1 Features
1• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Exceeds HBM ESD Classification Level 2
– Device CDM ESD Classification Level C4B
• Peak Input AC Voltage: 42 V
• Zero IQ
• Charge Pump Gate Driver for external N-Channel
MOSFET
• Low Forward-Voltage Drop and Less Power
Dissipation Compared to Schottky Diode
• Capable of handling AC signal up to 300-Hz
Frequency
2 Applications
• AC Rectifier
• Alternator
• Power Tools
• Reverse Polarity Protection
3 Description
The LM74670-Q1 is a controller device that can be
used with an N-Channel MOSFET in full or half
bridge rectifier architectures for alternators. It is
designed to drive an external MOSFET to emulate an
ideal diode. A unique advantage of this scheme is
that it is not ground referenced, thus it has zero IQ.
The schottky diodes in full or half bridge rectifiers and
alternators can be replaced with the LM74670-Q1
solution to avoid forward conduction diode losses and
produce more efficient AC-DC converters.
The LM74670-Q1 controller provides a gate drive for
external N-Channel MOSFET and a fast response
internal comparator to pull-down the MOSFET Gate
in the event of reverse polarity. This device can
support an AC signal frequency up to 300Hz.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI |
22+ |
VSSOP |
2000 |
代理渠道/只做原装/可含税 |
|||
TI(德州仪器) |
24+ |
VSSOP8 |
9048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI/德州仪器 |
24+ |
VSSOP-8 |
55000 |
百分百原装保证现货 |
|||
TI |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
TI/德州仪器 |
23+ |
VSSOP8 |
3000 |
全新原装假一赔十 |
|||
TI |
24+ |
SMD |
17900 |
热交换电压控制器 |
|||
TexasInstruments |
24+ |
8-VSSOP |
90000 |
原厂正规渠道、保证进口原装现货假一罚十价格合理 |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI |
16+ |
VSSOP |
10000 |
原装正品 |
|||
TI |
20+ |
NA |
53650 |
TI原装主营-可开原型号增税票 |
LM74670QDGKRQ1 资料下载更多...
LM74670QDGKRQ1 芯片相关型号
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- P25Q40SHA-WXH-IY-X
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