PIC16F/LF182X/PIC12F/LF1822 Memory Programming Specification

OVERVIEW The PIC16F/LF182X and PIC12F/LF1822 devices can be programmed using either the high-voltage In-Circuit Serial Programming™ (ICSP™) method or the low voltage ICSP™ method.

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances