TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 45∼50W Audio Frequency Amplifier Output Stage. • Complementary to KTB778.

TO-3P Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage ● High Current and Power Capability ● High Power Amplifier Application

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • Complement to Type KTB778 APPLICATIONS • High power amplifier applications • Recommend for 45-50W audio frequency amplifier output stage applications

General Purpose Transistor, TO-3P(H)IS, 120V, 10A

TRIPLE DIFFUSED NPN TRANSISTOR

文件：58.16 Kbytes Page：2 Pages

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz

Silicon N-Channel MOSFET Tetrode

Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz

IC intended for use as a PWM controller

文件：30.91 Kbytes Page：6 Pages

Silicon N-channel dual-gate MOS-FETs

文件：114.27 Kbytes Page：12 Pages