TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 45∼50W Audio Frequency Amplifier Output Stage. • Complementary to KTB778.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • Complement to Type KTB778 APPLICATIONS • High power amplifier applications • Recommend for 45-50W audio frequency amplifier output stage applications

TO-3P Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage ● High Current and Power Capability ● High Power Amplifier Application

General Purpose Transistor, TO-3P(H)IS, 120V, 10A

• Recommended for 45~50W Audio Frequency \n• Amplifier Output Stage\n• Complementary to KTB778;

TRIPLE DIFFUSED NPN TRANSISTOR

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N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES • High forward

Integrated Circuit 1.22V Reference Diode

Description: The NTE998 is a temperature compensated low voltage reference device in a TO92 type package. A single monolithic structure is obtained by utilizing transistors and thin film resistors. Benefits of this construction is low noise, low current, and good long term stability associated wi

Silicon N-channel dual-gate MOS-FETs

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Silicon N-channel dual-gate MOS-FETs

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3.0 mm Blue Series

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