EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTA1225D/L.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

General Purpose Transistor, DPAK, 160V, 1.5A

• High Transition Frequency : fT=100MHz(typ.)\n• Complementary to KTA1225D.;

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTA1225D/L.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

PITAXIAL PLANAR NPN TRANSISTOR

文件：404.36 Kbytes Page：3 Pages

NPN Epitaxial Planar Silicon Transistor

文件：615.25 Kbytes Page：3 Pages

Micropower 150 mA Voltage Regulator in SOT-23 Package For Output Voltages 1.2V Designed for Use with Very Low ESR Output Capacitors

文件：285.07 Kbytes Page：11 Pages

HIGH-VOLTAGE, HIGH-CURRENT SOURCE DRIVERS

文件：92.08 Kbytes Page：2 Pages