EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTA1225D/L.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

General Purpose Transistor, DPAK, 160V, 1.5A

PITAXIAL PLANAR NPN TRANSISTOR

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(UDN2981 - UDN2984) 8-CHANNEL SOURCE DRIVERS

FEATURES - TTL, DTL, PMOS, or CMOS Compatible Inputs - 500 mA Output Source Current Capability - Transient-Protected Outputs - Output Breakdown Voltage to 80 V - DIP or SOIC Packaging

Femto/Picoammeter and Electrometer/High Resistance Meter

B2980A Series Key Features –– 0.01 fA (10-17 A) minimum measurement resolution and 2 pA to 20 mA current –– measurement ranges with 6.5 digits resolution ––

Constant current inverse buck LED driver using L6562A

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Femto/Picoammeter and Electrometer/High Resistance Meter

文件：4.34198 Mbytes Page：16 Pages

Power Amplifier Applications Driver Stage Amplifier Applications

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