EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTA1225D/L.

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 160V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

(UDN2981 - UDN2984) 8-CHANNEL SOURCE DRIVERS

FEATURES - TTL, DTL, PMOS, or CMOS Compatible Inputs - 500 mA Output Source Current Capability - Transient-Protected Outputs - Output Breakdown Voltage to 80 V - DIP or SOIC Packaging

Constant current inverse buck LED driver using L6562A

文件：1.95432 Mbytes Page：32 Pages

Femto/Picoammeter and Electrometer/High Resistance Meter

文件：4.34198 Mbytes Page：16 Pages

Power Amplifier Applications Driver Stage Amplifier Applications

文件：155.58 Kbytes Page：4 Pages

NPN Epitaxial Planar Silicon Transistor

文件：615.25 Kbytes Page：3 Pages