High Voltage Switch Mode Applications

High Voltage Switch Mode Applications • High Voltage Capability • High Speed Switching • Suitable for Switching Regulator and Motor Control

AC-DC PWM CONTROLLER PRIMARY SWITCHING REGULATORS

DESCRIPTION The AP8010 is a high performance AC-DC off‐line controller for low power battery charger and adapter applications with Universal‐input. It uses Pulse Frequency and Width Modulation (PFWM) method to build discontinuous conduction mode (DCM) flyback power supplies. The AP8010 util

NPN芯片晶体管

•高速开关\n•适合开关稳压器和电机控制\n•高压开关模式;

NPN Silicon Transistor

文件：466.72 Kbytes Page：4 Pages

High Voltage Switch Mode Applications

High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control

NPN Silicon Transistor

•高速开关\n•适合开关稳压器和电机控制\n•高压开关模式;

NPN Silicon Transistor

文件：466.72 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 400V 1.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 400V 1.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Transistor

文件：466.72 Kbytes Page：4 Pages

NPN Silicon Transistor

文件：466.72 Kbytes Page：4 Pages

NPN Silicon Transistor

文件：466.72 Kbytes Page：4 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt