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位置：首页 > IC中文资料第5624页 > K4S643233

K4S643233价格

参考价格：￥37.9995

型号：K4S643233HFN75000$SCR 品牌：Samsung Semi 备注：这里有K4S643233多少钱，2025年最近7天走势，今日出价，今日竞价，K4S643233批发/采购报价，K4S643233行情走势销售排行榜，K4S643233报价。
型号 功能描述 生产厂家 企业 LOGO 操作
K4S643233F

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-DE/P1H

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-DE/P1L

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-DE/P75

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-DESLASHP1H

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-DESLASHP1L

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-DESLASHP75

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SE/I

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SE/N

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SE/P1H

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SE/P1L

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SE/P75

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SESLASHI

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SESLASHN

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SESLASHP1H

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SESLASHP1L

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233F-SESLASHP75

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

Samsung

三星

K4S643233H

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-C

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-F

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-F1H

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-F1L

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-FE

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-FHE

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-G

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-L

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233H-N

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

Samsung

三星

K4S643233E-SE(N)

512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

Samsung

三星

K4S643233F

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Samsung

三星

K4S643233H

Mobile-SDRAM

Samsung

三星

K4S643233产品属性

  • 类型

    描述

  • 型号

    K4S643233

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

K4S643233供应商更多...

更新时间：2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
K4S64323H-TC60
SAMSUNG/三星
24+
NA/
3285
原装现货,当天可交货,原型号开票
询价
上海意淼电子科技有限公司
K4S64323F-DE75
QTC
23+
DIP-8
6500
全新原装假一赔十
询价
深圳市明嘉莱科技有限公司
K4S643233H-HN75
SAMSUNG/三星
24+
BGA
990000
明嘉莱只做原装正品现货
询价
深圳市科达星科技有限公司
K4S64323F-DE75
SAMSUNG
24+
BGA
26200
原装现货,诚信经营!
询价
深圳市赛美科科技有限公司
K4S643233H-FNN75
SAMSUNG
BGA
3350
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市赛尔通科技有限公司
K4S643233H-FN750JR
SM
23+
65480
询价
深圳市诺美思科技有限公司
K4S643233H-HN75
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市振宏微科技有限公司
K4S64323ETC60
SAM
23+
NA
262
专做原装正品,假一罚百!
询价
深圳市科恒伟业电子有限公司
K4S643233H-HN75
SAMSUNG/三星
2450+
BGA
6540
只做原厂原装正品现货或订货!终端工厂可以申请样品!
询价
贸泽芯城（深圳）电子科技有限公司
K4S643233H-FN75
SAMSUNG/三星
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价

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