位置：首页 > IC中文资料第5513页 > K4S643233H-F
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K4S643233H-F | Mobile-SDRAM GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare | SamsungSamsung Group 三星三星半导体 |  |   |
Mobile-SDRAM GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare | SamsungSamsung Group 三星三星半导体 | | | |
Mobile-SDRAM GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare | SamsungSamsung Group 三星三星半导体 | | | |
Mobile-SDRAM GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare | SamsungSamsung Group 三星三星半导体 | | | |
Mobile-SDRAM GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare | SamsungSamsung Group 三星三星半导体 | | | |
2Mx32MobileSDRAM90FBGACMOSSDRAM GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | | | |
2Mx32MobileSDRAM90FBGACMOSSDRAM GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | | | |
2Mx32MobileSDRAM90FBGACMOSSDRAM GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep | SamsungSamsung Group 三星三星半导体 | | | |
Mobile-SDRAM GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare | SamsungSamsung Group 三星三星半导体 | | | |
Mobile-SDRAM GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare | SamsungSamsung Group 三星三星半导体 | | |
K4S643233H-F产品属性
- 类型
描述
- 型号
K4S643233H-F
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
Mobile-SDRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BGA |
500 |
||||||
SAMSUNG |
2023+ |
No |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
SAMSUNG |
23+ |
BGA |
5500 |
原装无铅,优势热卖 |
|||
SAMSUNG/三星 |
21+ |
BGA |
7891 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
6000 |
面议 |
19 |
BGA |
||||
SM |
22+ |
NA |
30000 |
原装现货假一罚十 |
|||
SAMSUNG/三 |
2019 |
BGA |
55000 |
真实现货库存 |
|||
SAMSUNG/三星 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
SAMSUNG |
20+ |
BGA |
200 |
英卓尔科技,进口原装现货! |
|||
SAMSANG |
19+ |
BGA |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
K4S643233H-F芯片相关品牌
K4S643233H-F规格书下载地址
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DdatasheetPDF页码索引
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