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位置：首页 > IC中文资料第5624页 > K4S643233F

型号 功能描述 生产厂家 企业 LOGO 操作
K4S643233F

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

SAMSUNG

三星

K4S643233F-DE/P1H

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-DE/P1L

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-DE/P75

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-DESLASHP1H

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-DESLASHP1L

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-DESLASHP75

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SE/I

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SE/N

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SE/P1H

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SE/P1L

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SE/P75

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SESLASHI

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SESLASHN

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SESLASHP1H

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SESLASHP1L

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233F-SESLASHP75

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are p

SAMSUNG

三星

K4S643233H

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

SAMSUNG

三星

K4S643233H-C

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

SAMSUNG

三星

K4S643233H-FE

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

SAMSUNG

三星

K4S643233H-FHE

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

SAMSUNG

三星

K4S643233H-N

Mobile-SDRAM

GENERAL DESCRIPTION The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are

SAMSUNG

三星

K4S643233F产品属性

  • 类型

    描述

  • 型号

    K4S643233F

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

K4S643233F供应商更多...

更新时间：2026-3-17 8:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市中飞凌科技有限公司
K4S643233F-SE75
SAMSUNG
26+
BGA
360000
原装现货
询价
深圳市力拓辉电子有限公司
K4S643233F-SE75
SAMSUNG
22+
5000
只做原装鄙视假货15118075546
询价
深圳市天芯威科技有限公司
K4S643233F-SE75
SAMSUNG
24+
BGA
8000
新到现货，只做全新原装正品
询价
深圳市诺美思科技有限公司
K4S643233F-SE75
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市欧立现代科技有限公司
K4S643233F-DNDS
SAMSUNG
24+
BGA
6980
原装现货,可开13%税票
询价
京海半导体(深圳)有限公司
K4S643233F-SF75
SAMSUNG/三星
25+
BGA
10000
原装现货假一罚十
询价
深圳市胜彬电子有限公司
K4S643233F-SE75
SAMSUNG/三星
22+
BGA
8000
原装正品支持实单
询价
深圳瞄钧科技有限公司
K4S643233F-DE75
SAMSUNG
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
询价
深圳市浩翊科技有限公司
K4S643233F-SE75
SAMSUNG
26+
BGA
12000
原装，正品
询价
深圳市福田区亿兴成电子商行
K4S643233F-SE75
BGA
194
询价

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