| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K3814 | SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION\nThe 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Super low on-state resistance\nRDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A)\nRDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)\n• Low Ciss: Ciss = 5450 pF TYP. • Super low on-state resistance\n• Low Ciss: Ciss = 5450 pF TYP.; | RENESAS 瑞萨 |   | |
K3814 | N-Channel 60 V (D-S) MOSFET 文件：977.18 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
MonolithicICs 文件：242.43 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
High- performance 5.1ch electronic volume 文件：39.84 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
Surface Mount RF PIN Low Distortion Attenuator Diodes 文件：153.36 Kbytes Page：9 Pages | HP 安捷伦 | | ||
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NTSC CCD Video Signal Delay Elements 文件：44.23 Kbytes Page：6 Pages | PANASONIC 松下 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
K3814芯片相关品牌
K3814规格书下载地址
K3814参数引脚图相关
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K3814数据表相关新闻
K4059G-SOT723R-B-TG_UTC代理商
K4059G-SOT723R-B-TG_UTC代理商
2023-2-8K32L2B31VMP0A
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2021-6-10K3RG2G20BM-AGCH
K3RG2G20BM-AGCH SAMSUNG/三星 2020 BGA KBY00N00HA-B448 TI/德州仪器 KBY00N00HA-A448 TI/德州仪器 2020 KAV00Q013M-A447 ALLWINNER/全志 16+ BGA441 APQ8055 QUALCOMM/高通 2020 BGA K4EBE304EB-EGCF RICHTEK/立锜 2018+ QFN K4EBE324EB-EGCG RICHTEK/立锜 2018+ QFN RC2512FK-073RL RICHTEK/立锜 2020 QFN PM
2021-5-26K3RG2G20BM-AGCH
K3RG2G20BM-AGCH SAMSUNG/三星 2020 BGA KBY00N00HA-B448 TI/德州仪器 KBY00N00HA-A448 TI/德州仪器 2020 KAV00Q013M-A447 ALLWINNER/全志 16+ BGA441 APQ8055 QUALCOMM/高通 2020 BGA K4EBE304EB-EGCF RICHTEK/立锜 2018+ QFN K4EBE324EB-EGCG RICHTEK/立锜 2018+ QFN RC2512FK-073RL RICHTEK/立锜 2020 QFN PM
2021-5-26K24C02C-SIRGA
K24C02C-SIRGA，当天发货0755-82732291全新原装现货或门市自取.
2020-10-2K2698
K2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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