丝印代码：K3562；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

丝印代码：K3568；Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

丝印代码：K3561；Switching Regulator Applications

文件：210.82 Kbytes Page：6 Pages

丝印代码：K3562；Switching Regulator Applications

文件：213.95 Kbytes Page：6 Pages

丝印代码：K3562；Silicon N Channel MOS Type Switching Regulator Applications

文件：231.5 Kbytes Page：6 Pages

丝印代码：K3568；Switching Regulator Applications

文件：200.33 Kbytes Page：6 Pages

Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)

Switching Regulator

IF Filter for Quasi/Split Sound Applications 38,00 MHz

Features ■ TV IF filter for quasi/split sound applications (separate picture and sound channel) ■ Picture channel with Nyquist slope and sound suppression, symmetrical output ■ Customized group delay predistortion ■ Sound channel with pass band for sound carriers between 31,5 MHz and 32,5 MHz

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

IF Filter for Quasi/Split Sound Applications 38,90 MHz

SAW Components IF Filter for Quasi/Split Sound Applications 38,90 MHz Features ■TV IF filter for quasi/split sound applications (separate picture and sound channel) ■Picture channel with Nyquist slope and sound suppression, symmetrical output ■Customized group delay predistorti

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

IF Filter for Quasi/Split Sound Applications 38,90 MHz

SAW Components IF Filter for Quasi/Split Sound Applications 38,90 MHz Features ■TV IF filter for quasi/split sound applications (separate picture and sound channel) ■Picture channel with Nyquist slope and sound suppression, symmetrical output ■Customized group delay predistorti

SAW Components

SAW Components\nIF Filter for Quasi/Split Sound ■TV IF filter for quasi/split sound applications (separate picture and sound channel)\n■Picture channel with Nyquist slope and sound suppression, symmetrical output\n■Customized group delay predistortion\n■Sound channel with pass band for sound carriers between 32,4 MHz and 33,4 MHzStandard\n■B/G\n■;

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS(ON)= 5.6Ω(typ.) • Highforward transferadmittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 720 V) • Enhancement-mode: Vth= 2.0~4.0 V (VDS = 10 V,ID= 1 mA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Switching Regulator Applications. 2SK3567 -> Marking K3567. • Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 m

isc N-Channel MOSFET Transistor

·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS

isc N-Channel MOSFET Transistor

·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS

Switching Regulator Applications

文件：210.82 Kbytes Page：6 Pages

Multilayer Chip Capacitors

文件：323.06 Kbytes Page：17 Pages

Switching Regulator Applications

文件：213.95 Kbytes Page：6 Pages

Multilayer Chip Capacitors

文件：323.06 Kbytes Page：17 Pages

SAW Components / IF Filter for Quasi/Split Sound Applications

Silicon N Channel MOS Type Switching Regulator Applications

文件：249.73 Kbytes Page：6 Pages

Switching Regulator Applications

文件：232.01 Kbytes Page：6 Pages

Silicon N Channel MOS Type Switching Regulator Applications

文件：223.23 Kbytes Page：6 Pages

Switching Regulator Applications

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Switching Regulator Applications

文件：200.33 Kbytes Page：6 Pages

N-Channel 6 50V (D-S) Power MOSFET

文件：2.2187 Mbytes Page：10 Pages

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

SINGLE-PHASE SILICON BRIDGE RECTIFIER

文件：27.61 Kbytes Page：2 Pages

SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes)

文件：27.38 Kbytes Page：2 Pages