TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

ADC3564 14-Bit, 125-MSPS, Low-Noise, Ultra-Low Power ADC

1 Features • 14-Bit 125 MSPS ADC • Noise floor: –156 dBFS/Hz • Ultra low power: 137 mW at 125 Msps • Latency: ≤ 2 clock cycles • Specified 14-bit, no missing codes • INL: ±1.5 LSB; DNL: ±0.5 LSB • Reference: external or internal • Input bandwidth: 1200 MHz (3 dB) • Industrial temperature

Banana Jack To #12, 16, 20 & 22 Socket

文件：127.3 Kbytes Page：2 Pages

NanoPower??Voltage Detector

文件：93.07 Kbytes Page：8 Pages

NanoPower Voltage Detector

文件：272.1 Kbytes Page：8 Pages

NanoPower??Voltage Detector

文件：93.07 Kbytes Page：8 Pages