TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Switching Regulator Applications. 2SK3567 -> Marking K3567. • Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 m

Silicon N Channel MOS Type Switching Regulator Applications

文件：223.23 Kbytes Page：6 Pages

Switching Regulator Applications

文件：205.14 Kbytes Page：6 Pages

T-13/4 (5 mm) Low Profile LED Lamps

Description The HLMP-335X/-336X Series are Gallium Arsenide Phosphide on Gallium Phosphide High Efficiency Red Light Emitting Diodes. Features • High Intensity • Low Profile: 5.8 mm (0.23 in.) Nominal • T-13/4 Diameter Package • Diffused and Non-diffused Types • General Purpose Leads • IC

NPN SILICON TRANSISTOR

description PN3567 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications.

Small Signal Transistors

Small Signal Transistors TO-92 Case (Continued)

NPN TRANSISTOR

文件：52.62 Kbytes Page：1 Pages

NTSC decoder

文件：106.44 Kbytes Page：15 Pages