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丝印代码:JCS4N60F;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60F;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60F;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60F;JCS4N60E

APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply FEATURES Low gate charge Low Crss (typical 2.5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60F;JCS4N60E

APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply FEATURES Low gate charge Low Crss (typical 2.5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60F;N-CHANNEL MOSFET

文件:1.97826 Mbytes Page:16 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60F;N-CHANNEL MOSFET

文件:1.97826 Mbytes Page:16 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

JCS4N60F

场效应晶体管/MOSFET-600V-700V系列

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60FB;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60FB;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60FB;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印代码:JCS4N60FB;N-CHANNEL MOSFET

APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

场效应晶体管/MOSFET-600V-700V系列

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

场效应晶体管/MOSFET-600V-700V系列

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

JCS4N60F产品属性

  • 类型

    描述

  • ID@100℃(A):

    2.5

  • PD(W):

    48

  • BVdss(V):

    600

  • Rds(on)(Ω):

    2.5

  • Package:

    TO-220MF

更新时间:2026-7-22 18:34:00
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JVC
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专业芯片配单原装正品假一罚十
COPAL
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绝对原装正品现货,全新深圳原装进口现货
YAMAICHI
25+
8000
原装现货,特价销售
JVC
25+
QFP
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TQFP
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全新 发货1-2天
JVC
17+
QFP
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100%原装正品现货
AOS/万代
25+
TO-220C
50000
原盒原标,正品现货 诚信经营 价格美丽 假一罚十

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