| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
JCS4N60FC | 场效应晶体管/MOSFET-600V-700V系列 | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 |   | |
丝印代码：JCS4N60F；N-CHANNEL MOSFET APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | | ||
丝印代码：JCS4N60F；N-CHANNEL MOSFET APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | | ||
丝印代码：JCS4N60F；N-CHANNEL MOSFET APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | |
JCS4N60FC产品属性
- 类型
描述
- ID@100℃(A)：
2.5
- PD(W)：
33
- BVdss(V)：
600
- Rds(on)(Ω)：
2.5
- Package：
TO-220MF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JVC |
23+ |
TQFP14 |
20000 |
全新原装假一赔十 |
|||
JVC |
24+ |
TQFP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
JVC |
08+ |
TQFP14 |
2255 |
全新原装进口自己库存优势 |
|||
华微 |
2022+ |
TO-220MF |
8000 |
只做原装支持实单,有单必成。 |
|||
JVC |
20+ |
MQFP |
500 |
样品可出,优势库存欢迎实单 |
|||
华微 |
25+23+ |
TO-220F |
23029 |
绝对原装正品全新进口深圳现货 |
|||
JVC |
23+ |
TQFP |
66600 |
专业芯片配单原装正品假一罚十 |
|||
YAMAHA |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
JVC |
23+ |
SOP32 |
65480 |
||||
JVC |
25+ |
MQFP |
1500 |
原装现货热卖中,提供一站式真芯服务 |
JCS4N60FC芯片相关品牌
JCS4N60FC规格书下载地址
JCS4N60FC参数引脚图相关
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DdatasheetPDF页码索引
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