位置：首页 > IC中文资料 > JCS160N08I
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 80V,152A,RDS(ON)=3.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 80V,152A,RDS(ON)=3.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=160A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CET |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
SR |
2023+ |
TO251 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
SR |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
C |
23+ |
T0-263 |
6000 |
原装正品，支持实单 |
|||
CET |
08PB |
50000 |
|||||
CET |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SR |
23+ |
T0-263 |
5000 |
原装正品,假一罚十 |
|||
CET |
24+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
JCS160N08I芯片相关品牌
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DdatasheetPDF页码索引
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