80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=160A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

功率 MOSFET，N 沟道，QFET®，80 V，160 A，7 mΩ，TO-3P

N-CHANNEL MOSFET

APPLICATIONS  High power DC/DC converters and switch mode power supplies  DC motor control  Automotive applications  Uninterruptible power supply FEATURES Comply with AEC Q101 standard Low gate charge Low Rdson Fast switching 100% avalanche tested Improved dv/dt capab

N-CHANNEL MOSFET

APPLICATIONS  High power DC/DC converters and switch mode power supplies  DC motor control  Automotive applications  Uninterruptible power supply FEATURES Comply with AEC Q101 standard Low gate charge Low Rdson Fast switching 100% avalanche tested Improved dv/dt capab

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 80V, 152A, RDS(ON) = 3.6mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 80V, 152A, RDS(ON) = 3.6mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.