位置：首页 > IC中文资料 > JCS160N08I-S-AR
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 80V,152A,RDS(ON)=3.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 80V,152A,RDS(ON)=3.6mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=160A@TC=25℃ ·DrainSourceVoltage- :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI |
19+ |
T0-263 |
29600 |
绝对原装现货,价格优势! |
|||
VB |
20+ |
T0-263 |
33902 |
绝对原装正品假一罚十! |
|||
CET |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
JINGDAO/晶导微 |
23+ |
SOD-123 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET/華瑞 |
2022+ |
TO-263 |
79999 |
||||
CET/華瑞 |
20+ |
TO-263 |
17 |
现货很近!原厂很远!只做原装 |
|||
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
CET |
08PB |
50000 |
|||||
CET |
2023+ |
TO-263 |
16800 |
芯为只有原装,公司现货 |
|||
CET |
21+ |
TO-263 |
70 |
原装现货假一赔十 |
JCS160N08I-S-AR芯片相关品牌
JCS160N08I-S-AR规格书下载地址
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DdatasheetPDF页码索引
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