Features

● Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

● 2ND generation CoolMOS power MOSFET

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped inductive

switching (UIS)

● Low thermal resistance due to reduced chip thickness

● Low drain to tab capacitance(

Applications

● Switched Mode Power Supplies (SMPS)

● Uninterruptible Power Supplies (UPS)

● Power Factor Correction (PFC)

● Welding

● Inductive Heating

Advantages

● Easy assembly: no screws or isolation foils required

● Space savings

● High power density