N-Channel Enhancement Mode

Low RDSon, high VDSS MOSFET

Electrically Isolated Back Surface

Features

• Silicon chip on Direct-Copper-Bond substrate

- high power dissipation

- isolated mounting surface

- 2500 V electrical isolation

• 3rd generation CoolMOS™ 1) power MOSFET

- high blocking capability

- lowest resistance

- avalanche rated for unclamped inductive switching (UIS)

• Low thermal resistance due to reduced chip thickness

• Low drain to tab capacitance (

Applications

• Switched mode power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

Advantages

• Easy assembly: no screws or isolation foils required

• Space savings

• High power density