Electrically isolated back surface

2500 V electrical isolation

N-Channel Enhancement Mode

Low RDSon, high VDSS MOSFET

Ultra low gate charge

Features

• Silicon chip on Direct-Copper-Bond substrate

- high power dissipation

- isolated mounting surface

- 2500 V electrical isolation

- low drain to tab capacitance (< 30 pF)

• Fast CoolMOS™ power MOSFET 4th generation

- high blocking capability

- lowest resistance

- avalanche rated for unclamped inductive switching (UIS)

- low thermal resistance due to reduced chip thickness

• Enhanced total power density

Applications

• Switched mode power supplies(SMPS)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

• Inductive heating

• PDP and LCD adapter