CoolMOS™ Power MOSFET in ISOPLUS220™ Package

Electrically Isolated Back Surface

N-Channel Enhancement Mode

Low RDS(on), Superjunction MOSFET

Features

• Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• 3RD generation CoolMOS power MOSFET

- High blocking capability

- Low on resistance

- Avalanche rated for unclamped inductive switching (UIS)

• Low thermal resistance due to reduced chip thickness

• Low drain to tab capacitance(

Applications

• Switched Mode Power Supplies (SMPS)

• Uninterruptible Power Supplies (UPS)

• Power Factor Correction (PFC)

• Welding

• Inductive Heating

Advantages

• Easy assembly: no screws or isolation foils required

• Space savings

• High power density