位置:IRG4BC20WS > IRG4BC20WS详情

IRG4BC20WS中文资料

厂家型号

IRG4BC20WS

文件大小

152.24Kbytes

页面数量

9

功能描述

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRG4BC20WS数据手册规格书PDF详情

Features

• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

• Industry-benchmark switching losses improve efficiency of all power supply topologies

• 50 reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Benefits

• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode)

• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300kHz)

IRG4BC20WS产品属性

  • 类型

    描述

  • 型号

    IRG4BC20WS

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)

更新时间:2025-10-5 16:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
18050
IR
23+
TO-263
50000
全新原装正品现货,支持订货
IR
21+
TO-263
10000
原装现货假一罚十
Infineon Technologies
22+
D2PAK
9000
原厂渠道,现货配单
IR
23+
TO-263
9200
原厂授权一级代理,专业海外优势订货,价格优势、品种
Infineon Technologies
23+
D2PAK
9000
原装正品,支持实单
IR
TO-263
68500
一级代理 原装正品假一罚十价格优势长期供货
IR
24+
NA/
9200
优势代理渠道,原装正品,可全系列订货开增值税票
IR
23+
TO-263
8000
只做原装现货
IR
23+
TO-263
7000