位置:IRG4BC20W-S > IRG4BC20W-S详情

IRG4BC20W-S中文资料

厂家型号

IRG4BC20W-S

文件大小

152.24Kbytes

页面数量

9

功能描述

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

IRF

IRG4BC20W-S数据手册规格书PDF详情

Features

• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

• Industry-benchmark switching losses improve efficiency of all power supply topologies

• 50 reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Benefits

• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode)

• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300kHz)

IRG4BC20W-S产品属性

  • 类型

    描述

  • 型号

    IRG4BC20W-S

  • 功能描述

    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB

更新时间:2025-10-7 14:14:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-263-2
32360
INFINEON/英飞凌全新特价IRG4BC20W-SPBF即刻询购立享优惠#长期有货
IR
24+
TO-263
132
INFINEON
25+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
IR
23+
SOT-263
50000
全新原装正品现货,支持订货
IR
21+
TO-263
10000
原装现货假一罚十
IR
04+
SOT-263
1800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR/VISHAY
22+
SOT-263
100000
代理渠道/只做原装/可含税
IR
22+
D2-PAK
6000
终端可免费供样,支持BOM配单
INFINEON/英飞凌
23+
TO-263
89630
当天发货全新原装现货