N-Channel Enhancement Mode

Polar™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Low QG • Avalanche Rated • Low Package Inductance • Fast Intrinsic Rectifier Advantages • High Power Density • Easy to Mount • Space Savings Applications • DC-DC Converters •

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20Ω(Max)@VGS= 10V APPLICATIONS · Switch-Mode and Resonant-Mode Power Supplies · AC and DC Motor Drives · DC-DC Converters · High Voltage Pulse Power Application

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 1200V 1A TO252 分立半导体产品 晶体管 - FET，MOSFET - 单个

N通道标准MOSFET

N-Channel Enhancement Mode Power MOSFET

文件：315.25 Kbytes Page：6 Pages

N-Channel Enhancement Mode Power MOSFET

文件：315.25 Kbytes Page：6 Pages

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct

5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state

6.2A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state