位置：首页 > IC中文资料第6016页 > HGTP1N120BN
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP1N120BN | 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct | Fairchild 仙童半导体 |   | |
HGTP1N120BN | 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct | Intersil | | |
HGTP1N120BN | 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct | Fairchild 仙童半导体 | | |
5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state | Intersil | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct | Fairchild 仙童半导体 | | ||
5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct | Fairchild 仙童半导体 | | ||
Trench Field-Stop Technology IGBT DESCRIPTION · Fast switching · Low Switching Losses APPLICATIONS · AC and DC motor controls · Power · Lighting | ISC 无锡固电 | | ||
5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct | Intersil | |
HGTP1N120BN产品属性
- 类型
描述
- 型号
HGTP1N120BN
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5.3A, 1200V, NPT Series N-Channel IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
|||
INTERSIL |
23+ |
54706 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
FAIRCHILD |
NEW |
TO-220 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
Intersil |
24+ |
TO-220 |
8866 |
||||
FAIRCHILD/仙童 |
24+ |
NA/ |
3618 |
原装现货,当天可交货,原型号开票 |
|||
23+ |
TO-220 |
5000 |
专注配单,只做原装进口现货 |
||||
FAIRCHILD |
06+ |
原厂原装 |
9870 |
只做全新原装真实现货供应 |
|||
INTERSIL |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
FAIRCHILD |
03+ |
TO220 |
700 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTERSIL |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
HGTP1N120BN规格书下载地址
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