High Voltage MOSFET N-Channel, Depletion Mode

Features ● Normally ON mode ● Low RDS(on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.2A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =30Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道耗尽型MOSFET

• “常开”运行状态\n• 线性模式容限\n• 内部标准封装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

High Voltage Power MOSFET

文件：213.74 Kbytes Page：4 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 分立半导体产品 晶体管 - FET，MOSFET - 单个

High Voltage MOSFET N-Channel, Depletion Mode

Features ● Normally ON mode ● Low RDS(on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

High Voltage MOSFET N-Channel, Depletion Mode

Features ● Normally ON mode ● Low RDS(on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

N-CHANNEL POWER MOSFET

文件：141.36 Kbytes Page：3 Pages

High Voltage Power MOSFET

文件：213.74 Kbytes Page：4 Pages