位置：首页 > IC中文资料第5995页 > IXTU02N50D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTU02N50D | High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS(on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators | IXYS 艾赛斯 |   | |
IXTU02N50D | High Voltage Power MOSFET 文件：213.74 Kbytes Page：4 Pages | IXYS 艾赛斯 | | |
IXTU02N50D | N沟道耗尽型MOSFET | Littelfuse 力特 | | |
High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS(on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators | IXYS 艾赛斯 | | ||
N-CHANNEL POWER MOSFET 文件：141.36 Kbytes Page：3 Pages | UTC 友顺 | | ||
High Voltage Power MOSFET 文件：213.74 Kbytes Page：4 Pages | IXYS 艾赛斯 | |
IXTU02N50D产品属性
- 类型
描述
- 型号
IXTU02N50D
- 功能描述
MOSFET 0.2 Amps 500V 30 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
IXYS/艾赛斯 |
23+ |
TO-251 |
9668 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS |
18+ |
TO-251 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IXYS |
2016+ |
TO-251 |
30170 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IXYS/艾赛斯 |
2447 |
TO-251 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IXYS |
23+ |
TO-251 |
7000 |
||||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IXYS/艾赛斯 |
07+ |
TO-251 |
9668 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTERSIL |
23+ |
TO-218AC |
69820 |
终端可以免费供样,支持BOM配单! |
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IXTU02N50D数据表相关新闻
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DdatasheetPDF页码索引
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