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IXTP02N50D价格
参考价格：￥14.5530
型号：IXTP02N50D 品牌：Ixys 备注：这里有IXTP02N50D多少钱，2025年最近7天走势，今日出价，今日竞价，IXTP02N50D批发/采购报价，IXTP02N50D行情走势销售排行榜，IXTP02N50D报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTP02N50D | HighVoltageMOSFETN-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Corporation |  |   |
IXTP02N50D | HighVoltagePowerMOSFET 文件：213.74 Kbytes Page：4 Pages | IXYS IXYS Corporation | | |
HighVoltageMOSFETN-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Corporation | | | |
N-CHANNELPOWERMOSFET 文件：141.36 Kbytes Page：3 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
HighVoltagePowerMOSFET 文件：213.74 Kbytes Page：4 Pages | IXYS IXYS Corporation | | |
IXTP02N50D产品属性
- 类型
描述
- 型号
IXTP02N50D
- 功能描述
MOSFET 0.2 Amps 500V 30 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
IXYS/艾赛斯 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
IXYS |
24+ |
TO-220-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
I |
24+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IXYS/艾赛斯 |
23+ |
TO-TO-220 |
83307 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
JD/晶导 |
23+ |
SMA(DO-214AC) |
69820 |
终端可以免费供样,支持BOM配单! |
|||
VBsemi/台湾微碧 |
20+ |
TO-220 |
5050 |
进口原装现货,假一赔十 |
IXTP02N50D芯片相关品牌
IXTP02N50D规格书下载地址
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2018-12-28
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