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IXTY01N100D价格
参考价格：￥7.1344
型号：IXTY01N100D 品牌：IXYS 备注：这里有IXTY01N100D多少钱，2025年最近7天走势，今日出价，今日竞价，IXTY01N100D批发/采购报价，IXTY01N100D行情走势销售排行榜，IXTY01N100D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTY01N100D | N-Channel, Depletion Mode High Voltage MOSFET High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators | IXYS 艾赛斯 |   | |
IXTY01N100D | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) =110Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
IXTY01N100D | N沟道耗尽型MOSFET | Littelfuse 力特 | | |
IXTY01N100D | Power MOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS 艾赛斯 | | |
Power MOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS 艾赛斯 | | ||
High Voltage MOSFET High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators | IXYS 艾赛斯 | | ||
N-Channel, Depletion Mode High Voltage MOSFET High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators | IXYS 艾赛斯 | | ||
High Voltage MOSFET High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators | IXYS 艾赛斯 | | ||
High Voltage MOSFET N-Channel, Enhancement Mode High Voltage MOSFET N-Channel, Enhancement Mode Features • International standard packages JEDEC TO-251 AA, TO-252 AA • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Level shifting • Triggers • Solid state relays • Current re | IXYS 艾赛斯 | | ||
Power MOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS 艾赛斯 | |
IXTY01N100D产品属性
- 类型
描述
- 型号
IXTY01N100D
- 功能描述
MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
1932+ |
TO-252 |
1026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
25+23+ |
TO-252 |
28372 |
绝对原装正品全新进口深圳现货 |
|||
IXYS |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IXYS |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IXYS |
2018+ |
10000 |
全新原装真实库存含13点增值税票！ |
||||
IXYS |
23+ |
TO-252 |
7000 |
||||
IXYS(艾赛斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IXYS |
1923+ |
TO-252 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
IXTY01N100D芯片相关品牌
IXTY01N100D规格书下载地址
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IXTY01N100D数据表相关新闻
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DdatasheetPDF页码索引
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