High Voltage MOSFET N-Channel, Enhancement Mode

High Voltage MOSFET N-Channel, Enhancement Mode Features • International standard packages JEDEC TO-251 AA, TO-252 AA • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Level shifting • Triggers • Solid state relays • Current re

N通道标准MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

N沟道耗尽型MOSFET

• “常开”运行状态\n• 线性模式容限\n• 内部标准封装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

N-Channel, Depletion Mode High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

Power MOSFET

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High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators

High Voltage MOSFET N-Channel, Enhancement Mode

High Voltage MOSFET N-Channel, Enhancement Mode Features • International standard packages JEDEC TO-251 AA, TO-252 AA • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Level shifting • Triggers • Solid state relays • Current re

N-Channel, Depletion Mode High Voltage MOSFET

High Voltage MOSFET N-Channel, Depletion Mode Features ● Normally ON mode ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Fast switching speed Applications ● Level shifting ● Triggers ● Solid state relays ● Current regulators