位置：首页 > IC中文资料第7230页 > IXTY01N100
IXTY01N100价格
参考价格：￥5.5292
型号：IXTY01N100 品牌：IXYS 备注：这里有IXTY01N100多少钱，2025年最近7天走势，今日出价，今日竞价，IXTY01N100批发/采购报价，IXTY01N100行情走势销售排行榜，IXTY01N100报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTY01N100 | HighVoltageMOSFETN-Channel,EnhancementMode HighVoltageMOSFET N-Channel,EnhancementMode Features •InternationalstandardpackagesJEDECTO-251AA,TO-252AA •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Levelshifting •Triggers •Solidstaterelays •Currentre | IXYS IXYS Corporation |  |   |
IXTY01N100 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel,DepletionModeHighVoltageMOSFET HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Corporation | | | |
PowerMOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS IXYS Corporation | | | |
PowerMOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS IXYS Corporation | | | |
HighVoltageMOSFET HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Corporation | | | |
N-Channel,DepletionModeHighVoltageMOSFET HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Corporation | | | |
HighVoltageMOSFET HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators | IXYS IXYS Corporation | | | |
HighVoltageMOSFETN-Channel,EnhancementMode HighVoltageMOSFET N-Channel,EnhancementMode Features •InternationalstandardpackagesJEDECTO-251AA,TO-252AA •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Levelshifting •Triggers •Solidstaterelays •Currentre | IXYS IXYS Corporation | | | |
PowerMOSFET 文件：164.45 Kbytes Page：6 Pages | IXYS IXYS Corporation | | |
IXTY01N100产品属性
- 类型
描述
- 型号
IXTY01N100
- 功能描述
MOSFET 0.1 Amps 1000V 80 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IXYS |
25+23+ |
TO-252 |
28372 |
绝对原装正品全新进口深圳现货 |
|||
IXYS |
19+ |
TO-252 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS |
23+ |
TO-252 |
5000 |
原装正品!假一罚十! |
|||
IXYS/艾赛斯 |
24+ |
TO-252 |
501565 |
免费送样原盒原包现货一手渠道联系 |
|||
IXYS |
2018+ |
10000 |
全新原装真实库存含13点增值税票！ |
||||
IXYS |
2447 |
TO-252-2(DPAK) |
105000 |
70个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
|||
IXYS/艾赛斯 |
24+ |
TO-252 |
19000 |
只做原厂渠道 可追溯货源 |
|||
IXYS/艾赛斯 |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IXYS |
7 |
IXTY01N100芯片相关品牌
IXTY01N100规格书下载地址
IXTY01N100参数引脚图相关
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- IZ0066
- IZ0065
- IYT0550
- IYD4251
- IYD2151
- IY100T
- IY100C
- IY100
- IXXH30N60B3D1
- IXXH110N65C4
- IXXH100N60C3
- IXXH100N60B3
- IXXCB3
- IXXCB1
- IXXCA3
- IXXCA1
- IXXBB3
- IXXBB1
- IXXBA3
- IXXBA1
- IXXAB3
- IXXAB1
- IXXAA3
- IXXAA1
- IXTY4N60P
- IXTY44N10T
- IXTY3N60P
- IXTY3N50P
- IXTY32P05T
- IXTY2N100P
- IXTY26P10T
- IXTY1R6N50P
- IXTY1R6N50D2
- IXTY1R6N100D2
- IXTY1R4N60P
- IXTY08N50D2
- IXTY08N100P
- IXTY08N100D2
- IXTY02N50D
- IXTY01N100D
- IXTX90P20P
- IXTX90N25L2
- IXTX8N150L
- IXTX600N04T2
- IXTX5N250
- IXTX550N055T2
- IXTX46N50L
- IXTX40P50P
- IXTX32P60P
- IXTX24N100
- IXTX20N150
- IXTX200N10L2
- IXTX170P10P
- IXTX110N20L2
- IXTV30N60PS
- IXTV26N50PS
- IXTV18N60PS
- IXTU12N06T
- IXTU01N100
- IXTT96N20P
- IXT905
- IXS839B
- IXS839A
- IXS839
- IXR100
- IXP46X
- IXP45X
- IXP42X
- IXP425
- IXP2400
- IXI859
- IXI858
- IXHQ100
- IXFH450
- IXFH350
- IXFH250
- IXFH150
- IXDS430
- IXDP631
- IXDP630
IXTY01N100数据表相关新闻
IXXYS MOS 二极管 IGBT IC 元器件 IXYS DIODE FRED Single MOS
IGBT模块.IGBT驱动板.IPM模块.GTR模块.IGBT单管.可控硅.晶闸管.整流模块.熔断器.二极管.电容.无感电容.变频器.伺服电机.伺服驱动器.
2023-9-18IXYH24N170C
IXYH24N170C
2023-5-24IXYH50N120C3D1
IXYH50N120C3D1
2023-5-24IXTH60N20X4
IXTH60N20X4
2022-8-31IXTH60N20X4
IXTH60N20X4
2022-8-11IXTT16N10D2
IXTT16N10D2
2022-6-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
