位置：首页 > IC中文资料第2354页 > IXTV22N60PS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTV22N60PS | PolarHVTM Power MOSFET N-Channel Enhancement Mode 文件：320.27 Kbytes Page：5 Pages | IXYS 艾赛斯 |   | |
IXTV22N60PS | N-Channel: Standard Power MOSFETs | Littelfuse 力特 | | |
HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.35Ω * Ultra Low Gate Charge | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
22A, 600V N-CHANNEL POWER MOSFET 文件：211.84 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel MOSFET 文件：986.23 Kbytes Page：2 Pages | ESTEK 伊泰克电子 | | ||
N-Channel MOSFET 600V, 22A, 0.165W 文件：532.87 Kbytes Page：8 Pages | Fairchild 仙童半导体 | |
IXTV22N60PS产品属性
- 类型
描述
- 型号
IXTV22N60PS
- 功能描述
MOSFET 22.0 Amps 600 V 0.33 Ohm Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原装 |
20+ |
原装 |
56200 |
原装优势主营型号-可开原型号增税票 |
|||
KDS |
25+23+ |
NA |
16447 |
绝对原装正品全新进口深圳现货 |
|||
IXYS |
24+ |
PLUS-220 |
100 |
||||
IXYS/艾赛斯 |
23+ |
PLUSTO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
25+ |
17ROHS |
880000 |
明嘉莱只做原装正品现货 |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
22+ |
PLUS220SMD |
9000 |
原厂渠道,现货配单 |
|||
KDS |
23+ |
SMD |
7000 |
||||
KDS |
23+ |
SMD |
8000 |
只做原装现货 |
|||
IXYS |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IXTV22N60PS规格书下载地址
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IXTV22N60PS数据表相关新闻
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DdatasheetPDF页码索引
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