isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，22 A，165 mΩ，TO-3P

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance（导通电阻规格），卓越的开关性能和耐用性。SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •BVDSS = 650V @ TJ = 150°C\n•RDS(on) = 140mΩ （典型值）@ VGS = 10V，ID = 11A\n•超低栅极电荷（典型值Qg = 45nC )\n•低有效输出电容（典型值Coss.eff = 196.4pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

N-Channel MOSFET 600V, 22A, 0.165W

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SMPS MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS

HEXFET Power MOSFET

Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dv/dt Capability Applications • Hard Switching Primary or PFS Switch • Switch M

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive    Requirement • Improved Gate, Avalanche and Dynamic dV/dt    Ruggedness • Fully Characterized Capacitance and Avalanche Voltage    and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC BENEFITS