位置：首页 > IC中文资料 > IXTV200N10T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTV200N10T | TrenchMV Power MOSFET 文件：220.61 Kbytes Page：5 Pages | IXYS 艾赛斯 |   | |
IXTV200N10T | N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options | Littelfuse 力特 | | |
TrenchMV Power MOSFET 文件：220.61 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G200N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Power MOSFET 文件：208.05 Kbytes Page：6 Pages | IXYS 艾赛斯 | | ||
Polar HiPerFET Power MOSFET 文件：119.44 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
Polar HiPerFET Power MOSFET 文件：91.89 Kbytes Page：5 Pages | IXYS 艾赛斯 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
PLUS-220SMD |
100 |
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IXYS/艾赛斯 |
23+ |
PLUSTO-220-SMD |
55300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
22+ |
PLUS220SMD |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IXYS |
25+ |
PLUSTO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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IXTV200N10T数据表相关新闻
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DdatasheetPDF页码索引
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