High Voltage MOSFET

N-Channel Enhancement Mode Avalanche Energy Rated Features ● International standard packages ● High voltage, Low RDS(on) HDMOS™ process ● Rugged polysilicon gate cell structure ● Fast switching times Applications ● Switch-mode and resonant-mode power supplies ● Flyback inverters ● DC cho

N-Channel: Standard Power MOSFETs

GOLD BONDED GERMANIUM DIODE

[BKC International Electronics Inc.] GOLD BONDED DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold