TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC motor controls · Laser Drivers

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

Power Field Effect Transistor

Power Field Effect Transistor

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Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

DESCRIPTION The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent MOSFET die into a convenient BGA package. This device is also available as discrete individual packaged Powermite3, see Microsemi data sheet UPF1N100. This device is also available as bare die, see Microsemi data sheet

TMOS POWER FET 1.0 AMPERES 1000 VOLTS

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on)= 9.0 OHM The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilit