Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

GOLD BONDED GERMANIUM DIODE

[BKC International Electronics Inc.] GOLD BONDED DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

GOLD BONDED GERMANIUM DIODES

Germanium Diodes

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GERMANIUM DIODES

Gold Bonded Germanium Diodes in DO-7 Package

germanium signal diode

germanium signal diode

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

Fast MOSFET Die for Implantable Cardio Defibrillator Applications

DESCRIPTION The MM196 is a Multi-Chip Module, MCM, incorporating 6 independent MOSFET die into a convenient BGA package. This device is also available as discrete individual packaged Powermite3, see Microsemi data sheet UPF1N100. This device is also available as bare die, see Microsemi data sheet

TMOS POWER FET 1.0 AMPERES 1000 VOLTS

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on)= 9.0 OHM The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilit

TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi