位置：首页 > IC中文资料第767页 > IXTQ72N20
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：MOSFET N-CH 200V 72A TO3P 分立半导体产品 晶体管 - FET，MOSFET - 单个 | IXYS |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 72A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications | ISC 无锡固电 | | ||
HiPerFET Power MOSFETs HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Molding epoxies meet UL94V-0 flammability classification • Low RDS (on) HDMOSTM process • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifier | IXYS | | ||
isc N-Channel MOSFET Transistor 文件：381.07 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Enhancement Mode 文件：117.64 Kbytes Page：2 Pages | IXYS | |
IXTQ72N20产品属性
- 类型
描述
- 型号
IXTQ72N20
- 功能描述
MOSFET 72 Amps 200V 33 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
123 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS |
20+ |
TO-3P |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS |
2016+ |
TO-3P |
6528 |
房间原装进口现货假一赔十 |
|||
IXYS |
23+ |
TO247 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
IXYS |
23+ |
TO-3P |
30000 |
代理全新原装现货,价格优势 |
|||
IXYS/艾赛斯 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
|||
IXYS |
22+ |
TO3P3 SC653 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
TO-3P |
8866 |
||||
IXYS |
23+ |
TO247 |
8000 |
只做原装现货 |
|||
IXYS |
23+ |
TO247 |
7000 |
IXTQ72N20芯片相关品牌
IXTQ72N20规格书下载地址
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2018-12-28
DdatasheetPDF页码索引
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