位置：首页 > IC中文资料第140页 > IXTH72N20
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTH72N20 | iscN-ChannelMOSFETTransistor 文件：381.07 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IXTH72N20 | N-ChannelEnhancementMode 文件：117.64 Kbytes Page：2 Pages | IXYS IXYS Corporation |  | |
封装/外壳：TO-247-3 包装：管件 描述：MOSFET N-CH 200V 72A TO247 分立半导体产品 晶体管 - FET，MOSFET - 单个 | IXYS IXYS Corporation | | | |
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •MoldingepoxiesmeetUL94V-0flammabilityclassification •LowRDS(on)HDMOSTMprocess •UnclampedInductiveSwitching(UIS)rated •Fastintrinsicrectifier | IXYS IXYS Corporation | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=72A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IXTH72N20产品属性
- 类型
描述
- 型号
IXTH72N20
- 功能描述
MOSFET 72 Amps 200V 0.033 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
2022+ |
TO-247 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IXYS |
23+ |
TO-247 |
8000 |
只做原装现货 |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
IXYS |
24+ |
TO-247 |
5000 |
全现原装公司现货 |
|||
IXYS/艾赛斯 |
21+ |
TO-247 |
10000 |
原装现货假一罚十 |
|||
IXYS/艾赛斯 |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
|||
IXYS/艾赛斯 |
24+ |
TO-247 |
150 |
原装现货假一赔十 |
|||
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IXYS/艾赛斯 |
24+ |
TO-247 |
60000 |
||||
IXYS |
23+ |
TO-247 |
7000 |
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2018-12-28
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