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IXTQ69N30P价格
参考价格:¥26.9230
型号:IXTQ69N30P 品牌:Ixys 备注:这里有IXTQ69N30P多少钱,2025年最近7天走势,今日出价,今日竞价,IXTQ69N30P批发/采购报价,IXTQ69N30P行情走势销售排行榜,IXTQ69N30P报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IXTQ69N30P | PolarHTPowerMOSFET 文件:107.23 Kbytes Page:5 Pages | IXYS IXYS Corporation | ||
PolarHTPowerMOSFET 文件:107.23 Kbytes Page:5 Pages | IXYS IXYS Corporation | |||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode 文件:149.42 Kbytes Page:5 Pages | IXYS IXYS Corporation | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=69A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=49mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PolarHiPerFETPowerMOSFET 文件:155.73 Kbytes Page:5 Pages | IXYS IXYS Corporation | |||
PolarHiPerFETPowerMOSFET 文件:155.73 Kbytes Page:5 Pages | IXYS IXYS Corporation |
IXTQ69N30P产品属性
- 类型
描述
- 型号
IXTQ69N30P
- 功能描述
MOSFET 69 Amps 300V 0.049 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
24+ |
NA/ |
85 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IXYS |
24+ |
TO-3P |
7911 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IXYS |
16+ |
TO-3P |
83 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
24+ |
TO-3P |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
IXYS |
24+ |
TO-3P |
5000 |
全新原装正品,现货销售 |
|||
IXYS |
23+ |
TO-3P |
20000 |
||||
IXYS |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
IXYS |
24+ |
TO-3P |
8866 |
||||
IXYS/艾赛斯 |
23+ |
TO-3P |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IXTQ69N30P规格书下载地址
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DdatasheetPDF页码索引
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