PolarHT Power MOSFET

Polar™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Features • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space Savings Applications • Switch-Mode and Resonant-Mode Power Suppli

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 300V(Min) • Static Drain-Source On-Resistance : RDS(on) = 66mΩ (Max) • Fast Switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switch-Mode and Resonant-Mode Power S

N-Channel Enhancement Mode Power MOSFETs

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N通道标准 Polar™ MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 32A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 52A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 73mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

PolarHT Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Avalanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

PolarHTTM HiPerFET Power MOSFET

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Power MOSFETs

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