位置：首页 > IC中文资料第1845页 > IXFC52N30P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFC52N30P | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IXFC52N30P | PolarHTTMHiPerFETPowerMOSFET 文件：97.5 Kbytes Page：5 Pages | IXYS IXYS Integrated Circuits Division |  | |
PolarHTPowerMOSFETHiPerFET 文件：151.12 Kbytes Page：5 Pages | IXYS IXYS Integrated Circuits Division | | | |
PolarHTPowerMOSFETHiPerFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PowerMOSFETs 文件：195.18 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
IXFC52N30P产品属性
- 类型
描述
- 型号
IXFC52N30P
- 功能描述
MOSFET 24 Amps 300V 0.066 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
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IXYS |
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IXFC52N30P规格书下载地址
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DdatasheetPDF页码索引
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