IXTP7N60P价格

参考价格:¥6.3669

型号:IXTP7N60P 品牌:Ixys 备注:这里有IXTP7N60P多少钱,2025年最近7天走势,今日出价,今日竞价,IXTP7N60P批发/采购报价,IXTP7N60P行情走势销售排行榜,IXTP7N60P报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IXTP7N60P

N-Channel Enhancement Mode Avalanche Rated

文件:764.86 Kbytes Page:4 Pages

IXYS

艾赛斯

IXTP7N60P

isc N-Channel MOSFET Transistor

文件:295.69 Kbytes Page:2 Pages

ISC

无锡固电

IXTP7N60P

N通道标准 Polar™ MOSFET

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Plastic overmolded tab for electrical isolation • International standard package • Avanlanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings Appli

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

• FEATURES • Drain Source Voltage- : VDSS= 600V(Min) • Static drain-source on-resistance : RDS(on) ≤ 1.1Ω@VGS=10V • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Ideal for high-frequenc

ISC

无锡固电

N-Channel: Standard Power MOSFETs

Littelfuse

力特

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20Ω@VGS = 10 V ● Low gate cha

ESTEK

伊泰克电子

isc N-Channel Mosfet Transistor

• DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requirem

ISC

无锡固电

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

UTC

友顺

7A 600V N-channel Enhancement Mode Power MOSFET

文件:898.89 Kbytes Page:11 Pages

WXDH

东海半导体

IXTP7N60P产品属性

  • 类型

    描述

  • 型号

    IXTP7N60P

  • 功能描述

    MOSFET 1.1 Ohms Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-4 20:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
23+
TO-220
5000
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IXYS
17+
TO-220
6200
IXYS
22+
TO2203
9000
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IXYS
24+
TO-220
247
IXYS
24+
TO-220
5000
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IXYS
23+
TO-220-3
11846
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IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
NEXPERIA/安世
23+
SOT457
69820
终端可以免费供样,支持BOM配单!
IXYS/艾赛斯
23+
TO-220
89630
当天发货全新原装现货

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