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IXTP7N60P价格
参考价格：￥6.3669
型号：IXTP7N60P 品牌：Ixys 备注：这里有IXTP7N60P多少钱，2025年最近7天走势，今日出价，今日竞价，IXTP7N60P批发/采购报价，IXTP7N60P行情走势销售排行榜，IXTP7N60P报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTP7N60P | N-ChannelEnhancementModeAvalancheRated 文件：764.86 Kbytes Page：4 Pages | IXYS IXYS Corporation |  |   |
IXTP7N60P | iscN-ChannelMOSFETTransistor 文件：295.69 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor •FEATURES •DrainSourceVoltage- :VDSS=600V(Min) •Staticdrain-sourceon-resistance :RDS(on)≤1.1Ω@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATION •DC/DCConverter •Idealforhigh-frequenc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Plasticovermoldedtabforelectrical isolation •Internationalstandardpackage •Avanlancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings Appli | IXYS IXYS Corporation | | | |
7.4Amps,600VoltsN-CHANNELMOSFET ■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
iscN-ChannelMosfetTransistor •DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
7Amps竊?00VoltsN-ChannelMOSFET ■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 |  | | |
7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
7A600VN-channelEnhancementModePowerMOSFET 文件：898.89 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 |  | |
IXTP7N60P产品属性
- 类型
描述
- 型号
IXTP7N60P
- 功能描述
MOSFET 1.1 Ohms Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
TO-220 |
5000 |
专做原装正品,假一罚百! |
|||
IXYS |
24+ |
TO-220 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IXYS |
17+ |
TO-220 |
6200 |
||||
IXYS |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
TO-220 |
247 |
||||
IXYS/艾赛斯 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IXYS |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IXYS |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
NEXPERIA/安世 |
23+ |
SOT457 |
69820 |
终端可以免费供样,支持BOM配单! |
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IXTP7N60P规格书下载地址
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2018-12-28
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