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型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)

VDSS 500V Rds(on) max 0.52Ω ID 6.6A Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch

IRF

HEXFET Power MOSFET

Features and Benefits ● Super Fast body diode eliminates the need for external diodes in ZVS applications ● Lower Gate charge results in simpler drive requirements ● Enhanced dV/dt capabilities offer improved ruggedness ● Higher Gate Voltage Threshold Offers Improved Noise Immunity Applicatio

IRF

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

文件:408.17 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

文件:958.82 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

IXTP7N50产品属性

  • 类型

    描述

  • 功能描述:

    TRANSISTOR

更新时间:2026-7-31 16:01:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
24+
N/A
1500
MOTOROLA
24+
TO-3
1100
原装现货假一罚十

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