isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 7Ω@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Switch-Mode and Resonant-Mod

N-Channel Enhancement Mode Avalanche Rated

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Low Package Inductance (

N通道标准高电压MOSFET

• 国际标准包装\n• 快速切换时间\n• 雪崩评级\n• 坚固的多晶硅栅极单元结构\n• 超低的RDS(on);

Trans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220AB

N-Channel Enhancement Mode Avalanche Rated

Polar Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Applications:

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 7.5Ω@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Switch-Mode and Resonant-M

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

High Voltage IGBT

文件：85.86 Kbytes Page：2 Pages

High Voltage IGBT

文件：85.86 Kbytes Page：2 Pages