FQD2N100价格

参考价格:¥2.5547

型号:FQD2N100TM 品牌:Fairchild 备注:这里有FQD2N100多少钱,2026年最近7天走势,今日出价,今日竞价,FQD2N100批发/采购报价,FQD2N100行情走势销售排行榜,FQD2N100报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FQD2N100

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FAIRCHILD

仙童半导体

FQD2N100

N-Channel QFET짰 MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FAIRCHILD

仙童半导体

FQD2N100

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FAIRCHILD

仙童半导体

FQD2N100

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1.6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on): 9Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

ISC

无锡固电

FQD2N100

功率 MOSFET,N 沟道,QFET®,1000 V,1.6 A,9 Ω,DPAK

ONSEMI

安森美半导体

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FAIRCHILD

仙童半导体

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 7Ω@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Switch-Mode and Resonant-Mod

ISC

无锡固电

High Voltage IGBT

文件:85.86 Kbytes Page:2 Pages

IXYS

艾赛斯

High Voltage IGBT

文件:85.86 Kbytes Page:2 Pages

IXYS

艾赛斯

FQD2N100产品属性

  • 类型

    描述

  • 型号

    FQD2N100

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    1000V N-Channel MOSFET

更新时间:2026-3-14 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
ON(安森美)
23+
25900
新到现货,只有原装
ON
24+
TO-252
2500
只做原装 有挂有货 假一赔十
FAIRCHILD/仙童
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
FAIRCHILD/仙童
25+
TO-252
45000
FAIRCHILD/仙童全新现货FQD2N100即刻询购立享优惠#长期有排单订
ON/安森美
24+
DPAK
15524
原装正品,现货库存,1小时内发货
ON/安森美原装正品
26+
TO-252
17917
全新原装正品,价格优势,长期供应,量大可订
ON(安森美)
25+
N/A
22412
原装正品现货,原厂订货,可支持含税原型号开票。
ON
25+
原装优势现货
50000
原装优势现货
FAIRCHILD/仙童
11+19+
TO-252
6270
原装正品 可含税交易

FQD2N100数据表相关新闻