1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

N-Channel QFET짰 MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1.6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on): 9Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

功率 MOSFET，N 沟道，QFET®，1000 V，1.6 A，9 Ω，DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •1.6 A、1000 V、RDS(on)= 9 Ω（最大值），需 VGS = 10 V、ID = 0.8 A栅极电荷低（典型值：12nC)\n•低 Crss（典型值5pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n•RoHS Compliant;

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

1000V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 7Ω@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converter • Switch-Mode and Resonant-Mod

High Voltage IGBT

文件：85.86 Kbytes Page：2 Pages

High Voltage IGBT

文件：85.86 Kbytes Page：2 Pages