isc N-Channel MOSFET Transistor

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N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V • Fully characterized avalanche voltage and current • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATION • DC/DC Converters • High Current Swi

N-Channel Enhancement Mode Avalanche Rated

TrenchMV Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • Ultra-low On Resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • 175 ° C Operating Temperature Advantages • Easy to mount • Space savings • High p

N-Channel Enhancement Mode Avalanche Rated

TrenchMV Power MOSFET N-Channel Enhancement Mode Avalanche Rated Features • Ultra-low On Resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • 175 ° C Operating Temperature Advantages • Easy to mount • Space savings • High p

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=200A@ TC=25℃ ·Drain Source Voltage- : VDSS=85V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

isc N-Channel MOSFET Transistor

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