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IXTP1N100价格
参考价格：￥13.4241
型号：IXTP1N100 品牌：IXYS 备注：这里有IXTP1N100多少钱，2024年最近7天走势，今日出价，今日竞价，IXTP1N100批发/采购报价，IXTP1N100行情走势销售排行榜，IXTP1N100报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTP1N100 | HighVoltageMOSFET HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb | IXYS IXYS Integrated Circuits Division |  |   |
PolarPowerMOSFET PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤15Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-Mo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
MEDIUMANDLOWVOLTAGEGERMANIUMDIODES MEDIUMANDLOWVOLTAGEGERMANIUMDIODES | AMMSEMI American Microsemiconductor |  | | |
GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
GOLDBONDEDGERMANIUMDIODE [BKCInternationalElectronicsInc.] GOLDBONDEDDIODES | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
OptimizedforRadioFrequencyResponse OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
OptimizedforRadioFrequencyResponse OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
IXTP1N100产品属性
- 类型
描述
- 型号
IXTP1N100
- 功能描述
MOSFET 1.5 Amps 1000V 11 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-220-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS/艾赛斯 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
21+ |
TO2203 |
13880 |
公司只售原装,支持实单 |
|||
IXYS |
20+ |
TO-220-3 |
90000 |
全新原装正品/库存充足 |
|||
IXYS/艾赛斯 |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
IXYS/艾赛斯 |
2024+实力库存 |
PMPAK |
15 |
只做原厂渠道 可追溯货源 |
|||
IXYS |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-220-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS/艾赛斯 |
23+ |
SOP-8 |
89630 |
当天发货全新原装现货 |
IXTP1N100芯片相关品牌
IXTP1N100规格书下载地址
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2018-12-28
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