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IXTP1N100价格
参考价格：￥13.4241
型号：IXTP1N100 品牌：IXYS 备注：这里有IXTP1N100多少钱，2025年最近7天走势，今日出价，今日竞价，IXTP1N100批发/采购报价，IXTP1N100行情走势销售排行榜，IXTP1N100报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTP1N100 | HighVoltageMOSFET HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features •Internationalstandardpackages •Highvoltage,LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Flyb | IXYS IXYS Corporation |  |   |
PolarPowerMOSFET PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity Applications | IXYS IXYS Corporation | | | |
iscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤15Ω@VGS=10V •Fullycharacterizedavalanchevoltageandcurrent •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Switch-ModeandResonant-Mo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
MEDIUMANDLOWVOLTAGEGERMANIUMDIODES MEDIUMANDLOWVOLTAGEGERMANIUMDIODES | AMMSEMIAmerican Microsemiconductor 美国微半导体有限公司 |  | | |
GOLDBONDEDDIODES [VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
GOLDBONDEDGERMANIUMDIODE [BKCInternationalElectronicsInc.] GOLDBONDEDDIODES | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
OptimizedforRadioFrequencyResponse OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
OptimizedforRadioFrequencyResponse OptimizedforRadioFrequencyResponse CanbeusedinmanyAM,FMandTV-IFapplications,replacingpointcontactdevices. Features ●Lowerleakagecurrent ●Flatjunctioncapacitance ●Highmechanicalstrength ●Atleast1millionhoursMTBF ●BKCsSigma-Bond™platingforproblemfreesold | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
IXTP1N100产品属性
- 类型
描述
- 型号
IXTP1N100
- 功能描述
MOSFET 1.5 Amps 1000V 11 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
24+ |
PMPAK |
15 |
只做原厂渠道 可追溯货源 |
|||
IXYS/艾赛斯 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IXYS/艾赛斯 |
23+ |
TO-TO-220 |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IXYS |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
24+ |
8866 |
||||||
IXYS |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
EXPLORE |
23+ |
LQFP-64 |
69820 |
终端可以免费供样,支持BOM配单! |
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IXTP1N100规格书下载地址
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2018-12-28
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